PART |
Description |
Maker |
MGF0906 MGF0906B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries] Alpha Industries Inc
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET 3W L, S-BAND POWER GaAs MESFET 3W升,S波段功率GaAs MESFET
|
NEC Corp. NEC, Corp.
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET 2W X / Ku-BAND POWER GaAs MESFET 2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册,S波段功率GaAs场效应晶体管 0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
FLC103WG |
C-Band Power GaAs FETs
|
Fujitsu
|
FMC2122LN-03 |
K-Band Power GaAs Modules
|
Fujitsu
|
HWF1682RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|